Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesasDECHOUX, N; DAMLENCOURT, J. F; RIVALLIN, P et al.Thin solid films. 2010, Vol 518, issn 0040-6090, S92-S95, SUP1Conference Paper

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?VINCENT, B; DAMLENCOURT, J. F; CAMPIDELLI, Y et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 205-213, issn 1369-8001, 9 p.Conference Paper